Three dimensional integrated circuits

ABSTRACT

A three-dimensional semiconductor device includes a first module layer having a plurality of circuit blocks; and a second module layer positioned substantially above the first module layer, including a plurality of configuration circuits to control a portion of the circuit blocks.

[0001] This application claims priority from Provisional ApplicationSerial No. 60/393,763 entitled “Wire Replaceable TFT SRAM Cell and CellArray Technology”, filed on Jul. 8, 2002, Provisional Application SerialNo. 60/397,070 entitled “Wire Replaceable Thin Film Fuse and Anti-fuseTechnology”, filed on Jul. 22, 2002, and Provisional Application SerialNo. 60/400,007 entitled “Re-programmable ASIC”, filed on Aug. 1, 2002,all of which list as inventor Mr. R. U. Madurawe and the contents ofwhich are incorporated-by-reference.

[0002] This application is also related to application Ser. No.10/______ entitled “Methods for Manufacturing Three-DimensionalIntegrated Circuits” and application Ser. No. 10/______ entitled “FieldProgrammable Gate Array With Convertibility to Application SpecificIntegrated Circuit”, all of which were filed on Oct. ______, 2002 andlist as inventor Mr. R. U. Madurawe, the contents of which areincorporated-by-reference.

BACKGROUND

[0003] The present invention relates to multi-dimensional integratedcircuits.

[0004] Traditionally, integrated circuit (IC) devices such as custom,semi-custom, or application specific integrated circuit (ASIC) deviceshave been used in electronic products to reduce cost, enhanceperformance or meet space constraints. However, the design andfabrication of custom or semi-custom ICs can be time consuming andexpensive. The customization involves a lengthy design cycle during theproduct definition phase and high Non Recurring Engineering (NRE) costsduring manufacturing phase. Further, should bugs exist in the custom orsemi-custom ICs, the design/fabrication cycle has to be repeated,further aggravating the time to market and engineering cost. As aresult, ASICs serve only specific applications and are custom built forhigh volume and low cost applications.

[0005] Another type of semi custom device called a Gate Array customizesmodular blocks at a reduced NRE cost by synthesizing the design using asoftware model similar to the ASIC. The missing silicon level designverification results in multiple spins and lengthy design iterations.

[0006] In recent years there has been a move away from custom orsemi-custom ICs towards field programmable components whose function isdetermined not when the integrated circuit is fabricated, but by an enduser “in the field” prior to use. Off the shelf, generic ProgrammableLogic Device (PLD) or Field Programmable Gate Array (FPGA) productsgreatly simplify the design cycle. These products offer user-friendlysoftware to fit custom logic into the device through programmability,and the capability to tweak and optimize designs to optimize siliconperformance. The flexibility of this programmability is expensive interms of silicon real estate, but reduces design cycle and upfront NREcost to the designer.

[0007] FPGAs offer the advantages of low non-recurring engineeringcosts, fast turnaround (designs can be placed and routed on an FPGA intypically a few minutes), and low risk since designs can be easilyamended late en in the product design cycle. It is only for high volumeproduction runs that there is a cost benefit in using the moretraditional approaches. However, the conversion from an FPGAimplementation to an ASIC implementation typically requires a completeredesign. Such redesign is undesirable in that the FPGA design effort iswasted.

[0008] Compared to PLD and FPGA, an ASIC has hard-wired logicconnections, identified during the chip design phase, and need noconfiguration memory cells. This is a large chip area and cost savingfor the ASIC. Smaller ASIC die sizes lead to better performance. A fullcustom ASIC also has customized logic functions which take less gatecounts compared to PLD and FPGA configurations of the same functions.Thus, an ASIC is significantly smaller, faster, cheaper and morereliable than an equivalent gate-count PLD or FPGA. The trade-off isbetween time-to-market (PLD and FPGA advantage) versus low cost andbetter reliability (ASIC advantage).

[0009] There is no convenient migration path from a PLD or FPGA used asa design verification and prototyping vehicle to the lower die sizeASIC. All of the SRAM or Anti-fuse configuration bits and programmingcircuitry has no value to the ASIC. Programmable module removal from thePLD or FPGA and the ensuing layout and design customization is timeconsuming with severe timing variations from the original design.

SUMMARY

[0010] In one aspect, a three-dimensional semiconductor device includesa first module layer having a plurality of circuit blocks; and a secondmodule layer positioned substantially above the first module layer,including a plurality of configuration circuits to control a portion ofthe circuit blocks.

[0011] Implementations of the above aspect may include one or more ofthe following. The configuration circuits can be memory elements. Eachmemory element can be a transistor or a diode or a group of electronicdevices. The memory elements can be thin film devices such as thin filmtransistors (TFT) or diodes. The memory element can be selected from thegroup consisting of volatile or non volatile memory elements. The memoryelement can also be selected from the group of fuses, antifuses, SRAMcells, DRAM cells, metal optional links, EPROMs, EEPROMs, flash, andferro-electric elements. One or more redundant memory cells can beprovided for controlling the same circuit block. A third module layercan be formed substantially above the first and second module layer,wherein interconnect and routing signals are formed to connect thecircuit blocks within the first and second module layers. The thirdmodule layer can be formed substantially below the first and secondmodule layer. Alternatively, third and fourth module layers, whereininterconnect and routing is signals are formed can be positioned aboveand below the second module layer respectively. The circuit block cancontain a programmable logic block which responds to input data signalsand develops corresponding complete or partial output logic signals, andregisters to store the logic signals and either outputting them tooutput terminals or returning them as inputs to additional programmablelogic blocks. The programmable logic blocks can contain pass gate logic,multiplexer logic, truth table logic, or AND/OR logic blocks.

[0012] Implementations of the above aspect may further include one ormore of the following. The memory can be implemented using a TFT processtechnology that contains one or more of replaceable Fuses, Anti-fusesand SRAM elements. The process implementation is possible with anyprocess technology where EPROM, EEPROM, Flash, Ferro-Electric or anyother programmable element is vertically integrated.

[0013] In a second aspect, a multi-dimensional semiconductor deviceincludes a first module layer having a plurality of circuit blocksformed on a first plane; and a second module layer formed on a secondplane, including a plurality of configuration circuits formed to controla portion of the circuit blocks.

[0014] In a third aspect, a system includes a processor; data storagedevices coupled to the processor; and a three-dimensional semiconductordevice coupled to the processor, the 3D semiconductor device having afirst module layer having a plurality of circuit blocks formed on afirst plane and a second module layer formed on a second plane,including a plurality of configuration circuits formed to control aportion of the circuit blocks.

[0015] In a fourth aspect, a multi-dimensional semiconductor deviceincludes a plurality of circuit blocks formed on a substrate; and aplurality of configuration circuits formed substantially above thesubstrate to control at least one circuit block.

[0016] Implementation of the fourth aspect may include one or more ofthe following. The configuration circuit includes a predeterminedconductive pattern to control the circuit blocks. The configurationcircuits can be memory elements with one device selected from thefollowing: diode, transistor, thin film device, thin film resistor, thinfilm capacitor, thin film transistor (TFT). The memory element can beselected from the group consisting of volatile or non volatile memoryelements. The memory element can also be selected from a group of fuselinks, antifuse capacitors, SRAM cells, DRAM cells, metal optionallinks, EPROM cells, EEPROM cells, flash cells, and ferro-electricelements.

[0017] Implementations of the above aspects may include one or more ofthe following. The IC product is re-programmable in its initial stagewith turnkey conversion to an ASIC. The IC has the end ASIC coststructure and FPGA re-programmability. The IC product offering occurs intwo phases: the first stage is a generic FPGA that hasre-programmability containing a programmable module, and the secondstage is an ASIC with the entire programmable module replaced by 1 to 2customized hard-wire masks.

[0018] A series product families can be provided with a modularizedprogrammable element in an FPGA version followed by a turnkey customASIC with the same base die with 1-2 custom masks. The verticallyintegrated programmable module does not consume valuable silicon realestate of a base die. Furthermore, the design and layout of theseproduct families adhere to removable module concept: ensuring thefunctionality and timing of the product in its FPGA and ASIC canonicals.These IC products can replace existing PLD and FPGA products and competewith existing Gate Arrays and ASIC's in cost and performance.

[0019] Advantages of the IC may include one or more of the following. Aneasy turnkey customization of an ASIC from an original smaller PLD orFPGA would greatly enhance time to market, performance, low cost andbetter reliability.

BRIEF DESCRIPTION OF THE DRAWINGS

[0020]FIG. 1 shows a cross sectional view of a first embodiment of anintegrated circuit.

[0021]FIG. 2 shows a cross sectional view of a second embodiment of anintegrated circuit.

[0022]FIG. 3 shows a cross sectional view of a third embodiment of anintegrated circuit.

[0023]FIG. 4 shows a cross sectional view of a fourth embodiment of anintegrated circuit.

[0024]FIG. 5 shows an exemplary AND-OR PLD Architecture.

[0025]FIG. 6 shows an exemplary AND-OR array gate realization of PLD.

[0026]FIG. 7 shows one EEPROM implementation of a P-Term logic array.

[0027]FIG. 8 shows P-term configuration for SRAM/hard-wired PLDarchitecture.

[0028]FIG. 9 shows an exemplary pass-gate logic.

[0029]FIG. 10 shows an exemplary 4-Input logic MUX.

[0030]FIG. 11 shows an exemplary 2-Input Truth Table.

[0031]FIG. 12 shows a logic tree implementation of a 4-Input TruthTable.

[0032]FIG. 13 shows an exemplary 6T SRAM.

[0033]FIG. 14 shows pass gate transistor logic controlled by SRAM.

[0034]FIG. 15 shows one embodiment of a 5×6 switch matrix.

[0035]FIG. 16 shows pass gate controlled by Vcc (power) or Vss (ground)

[0036]FIG. 17 shows the 5×6 switch matrix

DESCRIPTION

[0037] In the following detailed description of the invention, referenceis made to the accompanying drawings which form a part hereof, and inwhich is shown, by way of illustration, specific embodiments in whichthe invention may be practiced. These embodiments are described insufficient detail to enable those skilled in the art to practice theinvention. Other embodiments may be utilized and structural, logical,and electrical changes may be made without departing from the scope ofthe present invention.

[0038] The terms wafer and substrate used in the following descriptioninclude any structure having an exposed surface with which to form theintegrated circuit (IC) structure of the invention. The term substrateis understood to include semiconductor wafers. The term substrate isalso used to refer to semiconductor structures during processing, andmay include other layers that have been fabricated thereupon. Both waferand substrate include doped and undoped semiconductors, epitaxialsemiconductor layers supported by a base semiconductor or insulator, SOImaterial as well as other semiconductor structures well known to oneskilled in the art. The term conductor is understood to includesemiconductors, and the term insulator is defined to include anymaterial that is less electrically conductive than the materialsreferred to as conductors. The following detailed description is,therefore, not to be taken in a limiting sense.

[0039] The term module layer includes a structure that is fabricatedusing a series of predetermined process steps. The boundary of thestructure is defined by a first step, one or more intermediate steps,and a final step. The resulting structure is formed on a substrate.

[0040] The term configuration circuit includes one or more configurableelements and connections that can be programmed for controlling one ormore circuit blocks in accordance with a predetermined user-desiredfunctionality. In one embodiment, the configuration circuits include aplurality of memory circuits to store instructions to configure an FPGA.In another embodiment, the configuration circuits include a firstselectable configuration where a plurality of memory circuits is formedto store instructions to control one or more circuit blocks. Theconfiguration circuits include a second selectable configuration with apredetermined conductive pattern formed in lieu of the memory circuit tocontrol substantially the same circuit blocks. The memory circuitincludes elements such as diode, transistor, resistor, capacitor, metallink, among others. The memory circuit also includes thin film elements.In yet another embodiment, the configuration circuits include apredetermined conductive pattern, via, resistor, capacitor or othersuitable circuits formed in lieu of the memory circuit to controlsubstantially the same circuit blocks.

[0041] The term “horizontal” as used in this application is defined as aplane parallel to the conventional plane or surface of a wafer orsubstrate, regardless of the orientation of the wafer or substrate. Theterm “vertical” refers to a direction perpendicular to the horizontaldirection as defined above. Prepositions, such as “on”, “side”,“higher”, “lower”, “over” and “under” are defined with respect to theconventional plane or surface being on the top surface of the wafer orsubstrate, regardless of the orientation of the wafer or substrate.

[0042]FIG. 1 shows a cross sectional view of a first embodiment of anintegrated circuit that can be selectably fabricated as either an FPGAor an ASIC. In this embodiment, a three-dimensional semiconductor device100 is shown. The device 100 includes a first module layer 102 having aplurality of circuit blocks 104 embedded therein. The device 100 alsoincludes a second module layer 106 formed substantially above the firstmodule layer 102. One or more configuration circuits 108 are formed tostore instructions to control a portion of the circuit blocks 104. Inthe embodiment of FIG. 1, wiring/routing circuits 112 are formed on athird layer 110 above the second layer 106. Circuits 112 connect to bothcircuits 104 and 108 to complete the functionality of the PLD.

[0043]FIG. 2 shows a cross sectional view of a second embodiment of anintegrated circuit that can be selectably fabricated as either an FPGAor an ASIC. In this embodiment, a three-dimensional semiconductor device120 is shown. The device 120 includes a first module layer 122 having aplurality of circuit blocks 124 embedded therein. The device 120 alsoincludes a second module layer 126 formed substantially above the firstmodule layer 122 that includes wiring and/or routing circuitry 128, anda third module layer 130 formed substantially above the second modulelayer 126 that includes configuration circuits 132. The wiring/routingcircuitry 128 is electrically connected to the circuit blocks 124 and toconfiguration circuits 132 in the third module layer 130. Theconfiguration circuits 132 store instructions to control a portion ofthe circuit blocks 124.

[0044]FIG. 3 shows a third embodiment which is substantially similar tothe embodiment of FIG. 2. In the embodiment of FIG. 3, a fourth layer140 having wiring/routing circuitry 142 is position above the thirdlayer 130. The wiring/routing circuitry 142 is electrically connected toone of the following: one or more circuit blocks 124, one or morewiring/routing circuitry 128, and one or more configuration circuits132.

[0045]FIG. 4 shows one implementation where the configuration memoryelement is SRAM. First, silicon transistors 150 are deposited on asubstrate. A module layer of removable SRAM memory cells 152 arepositioned above the silicon transistors 150, and a module layer ofinterconnect wiring or routing circuit 154 is formed above the removablememory cells 152. To allow this replacement, the design adheres to ahierarchical layout structure. As shown in FIG. 4, the SRAM cell moduleis sandwiched between the single crystal device layers below and themetal layers above electrically connecting to both. It also providesthrough connections “A” for the lower device layers to upper metallayers. The SRAM module contains no switching electrical signal routinginside the module. All such routing is in the layers above and below.Most of the programmable element configuration signals run inside themodule. Upper layer connections to SRAM module “C” are minimized toPower, Ground and high drive data wires. Connections “B” between SRAMmodule and single crystal module only contain logic level signals andreplaced later by Vcc and Vss wires. Most of the replaceableprogrammable elements and its configuration wiring is in the“replaceable module” while all the devices and wiring for the end ASICis outside the “replaceable module”. In other embodiments, thereplaceable module could exist between two metal layers or as the topmost layer satisfying the same device and routing constraints.

[0046] Fabrication of the IC also follows a modularized deviceformation. Formation of transistors 150 and routing 154 is by utilizinga standard logic process flow used in the ASIC fabrication. Extraprocessing steps used for memory element 152 formation are inserted intothe logic flow after circuit layer 150 is constructed. A full disclosureof the vertical integration of the TFT module using extra masks andextra processing is in the co-pending incorporated by referenceapplications discussed above.

[0047] During the customization, the base die and the data in thoseremaining mask layers do not change making the logistics associated withchip manufacture simple. Removal of the SRAM module provides a low coststandard logic process for the final ASIC construction with the addedbenefit of a smaller die size. The design timing is unaffected by thismigration as lateral metal routing and silicon transistors areuntouched. Software verification and the original FPGA designmethodology provide a guaranteed final ASIC solution to the user. A fulldisclosure of the ASIC migration from the original FPGA is in theco-pending incorporated by reference applications discussed above.

[0048] In FIG. 4, the third module layer is formed substantially abovethe first and second module layers, wherein interconnect and routingsignals are formed to connect the circuit blocks within the first andsecond module layers. Alternatively, the third module layer can beformed substantially below the first and second module layer withinterconnect and routing signals formed to connect the circuit blockswithin the first and second module layers. Alternatively, the third andfourth module layers positioned above and below the second module layerrespectively, wherein the third and fourth module layers provideinterconnect and routing signals to connect the circuit blocks withinthe first and second module layers.

[0049] In yet another embodiment of a programmable multi-dimensionalsemiconductor device, a first module layer is fabricated having aplurality of circuit blocks formed on a first plane. The programmablemulti-dimensional semiconductor device also includes a second modulelayer formed on a second plane. A plurality of configuration circuits isthen formed to store instructions to control a portion of the circuitblocks.

[0050] Next, details of the circuit blocks 104, the configurationcircuit 108, and the wiring and/or routing circuit 112 in FIG. 1 aredetailed.

[0051] A variety of digital or analog circuits can be used in circuitblocks 104. These circuit blocks include programmable logic blocks toallow user customization of logic. In one embodiment, programmable logicblocks are provided to respond to input data signals. The programmablelogic blocks develop corresponding complete or partial output logicsignals. Registers are used to store the output logic signals and eitheroutputting them to output terminals or returning them as inputs toadditional programmable logic blocks. The registers themselves can beprogrammable, allowing those to be configured such as T flip-flops, JKflip-flops, or any other register. The logic blocks may contain noregisters, or the registers may be programmed to be by-passed tofacilitate combinational logic implementation. The programmable logicblock can be selected from one of a pass gate logic, a multiplexerlogic, a truth table logic, or an AND/OR logic. FIG. 5 shows anexemplary AND-OR PLD Architecture. AND and OR arrays 202 and 204 containuser configurable programmable elements. FIG. 6 shows an exemplaryAND-OR array gate realization of a three input, four P-term, four outputPLD. The AND and OR array 210-212 are shown programmed to a specificpattern.

[0052] In yet other embodiments, the circuit block 104 contains aRAM/ROM logic block consisting of “logic element tree” or “P-Term logicarray” blocks that perform logic functions. FIG. 7 shows one such NANDEEPROM implementation of a P-Term in NAND-NOR logic array, while FIG. 8shows the same P-term configuration for either SRAM, or hard-wired PLDarchitectures. FIG. 7 shows two mirrored outputs P1 and P2. For outputP1, an AND gate 232 receives signals from pass transistors 222, 224, 228and 230. The pass transistor 222 is controlled by block 220 shown in thedashed circle, while the pass transistor 228 is controlled by block 226shown inside the dashed circle. Similarly, the upper half of FIG. 8includes an AND gate 252 that receives inputs from pass transistors 242,244, 248 and 250, respectively.

[0053]FIG. 9 shows an exemplary pass-gate logic 260 connecting one inputto one output. The NMOS pass gate voltage level SO determines an ON andOFF connection. FIG. 10 shows an exemplary 4-Input logic MUXimplementing an output function O where O=I0*S0+I1*S1+I2*S2+I3*S3. Inthe MUX, only one of S0 270, S1 272, S2 274, S3 276 has a logic one. TheMUX is constructed by combining four NMOS pass gate logic elements280-286 shown in FIG. 9.

[0054]FIG. 11 shows an exemplary 2-input truth table logic realizationof an output function F where,

[0055] F=/A*/B*S0+/A*B*S1+A*/B*S2+A*B*S3 (/A means not A).

[0056] The truth table logic states are represented by S0, S1, S2 andS3. The realization is done through six inverters collectivelydesignated 250 and eight pass transistors collectively designated 260.Logic states are stored in 4 programmable registers.

[0057]FIG. 12 shows a logic tree constructed with five 2-input truthtable logic blocks 320-328 to perform a full four input truth table. Afour input truth table has 16 possible logic states S0, S1, . . . , S15.As the number of inputs grows to N, this logic tree constructionrequires 2^(N) logic states, and 2^((N−1)) branches in the logic tree.For large N values, a full truth table realization is less efficientcompared to a partial product term AND-OR array realization.

[0058] In another embodiment, the programmable logic block can be aprogrammable microprocessor block. The microprocessor can be selectedfrom third party IP cores such as: 8051, Z80, 68000, MIPS, ARM, andPowerPC. These microprocessor architectures include superscalar, FineGrain Multi-Threading (FGMT) and Simultaneous Multi-Threading (SMT) thatsupport Application Specific Packet Processing (ASPP) routines. Tohandle Programmable Network Interface (PNI) the processor can containhardware and software configurability. Hardware upgradeability can begreatly enhanced in microprocessors embedded in PLD's by making use ofthe available logic content of the PLD device. Programmable features caninclude varying processor speed, cache memory system and processorconfiguration, enhancing the degree of Instruction Level Parallelism(ILP), enhancing Thread level parallelism (TLP). Such enhancements allowthe user to optimize the core processor to their specific application.Cache parameters such as access latency, memory bandwidth, interleavingand partitioning are also programmable to further optimize processorperformance and minimize cache hit miss rates. Additionally, theprocessor block can be a Very Long Instruction Word (VLIW) processor tohandle multimedia applications. The processor block can include a cachecontroller to implement a large capacity cache as compared with aninternal cache.

[0059] While a PLD can be configured to do DSP functions, theprogrammable logic block can also contain a digital signal processor(DSP), which is a special purpose processor designed to optimizeperformance for very high speed digital signal processing encountered inwireless and fiber-optic networks. The DSP applications can includeprogrammable content for cache partitioning, digital filters, imageprocessing and speech recognition blocks. These real-time DSPapplications contain high interrupt rates and intensive numericcomputations best handled by hardware blocks. In addition, theapplications tend to be intensive in memory access operations, which mayrequire the input and output of large quantities of data. The DSP cachememory may be configured to have a “Harvard” architecture with separate,independent program and data memories so that the two memories may beaccessed simultaneously. This architecture permits an instruction and anoperand to be fetched from memory in a single clock cycle. A modifiedHarvard architecture utilizes the program memory for storing bothinstructions and operands to achieve full memory utilization. Theprogram and data memories are often interconnected with the coreprocessor by separate program and data buses. When both instructions andoperands (data) are stored in a single program memory, conflicts mayarise in fetching data with the next instruction. Such conflicts havebeen resolved in prior art for DSP's by providing an instruction cacheto store conflicting instructions for subsequent program execution.

[0060] In yet another embodiment, programmable logic block can containsoftware programmability. These software functions are executed in DSP,ARM, or MIPS type inserted IP cores, or an external host CPU.Accelerators connected by a configurable SRAM switching matrix enhancethe computation power of the processors. The microprocessor has localpermanent SRAM memory to swap, read, and write data. The switch matrixis pre-designed to offer both hard-wire and programmable options in thefinal ASIC. In this situation, the circuit block 104 can be a functionalblock that performs well-defined, commonly-needed function, such asspecial D/A or A/D converter, standard bus interface, or such block thatimplements special algorithms such as MPEG decode. The specialalgorithms implemented can be hardware versions of software. Forexample, algorithms relating to digital radio or cellular telephone suchas WCDMA signal processing can be implemented by the functional block.Other functional blocks include PCI, mini-PCI, USB, UART blocks that canbe configured by specifying the SRAM logic blocks.

[0061] In yet another embodiment, the circuit block 104 can be memorysuch as a register file, cache memory, static memory, or dynamic memory.A register file is an array of latches that operate at high speed. Thisregister length counter may be programmable by the user. A cache memoryhas a high access throughput, short access latency and a smallercapacity as compared with main memory. The cache memory may beprogrammable to partition between the different requirements of thesystem design. One such need is the division between L1 and L2 cacherequirements for networking applications. The memory can also be staticrandom access memory or (SRAM) device with an array of single port, ormulti-port addressable memory cells. Each cell includes a fourtransistor flip-flop and access transistors that are coupled toinput/output nodes of the flip-flop. Data is written to the memory cellby applying a high or low logic level to one of the input/output nodesof the flip-flop through one of the access transistors. When the logiclevel is removed from the access transistor, the flip-flop retains thislogic level at the input/output node. Data is read out from theflip-flop by turning on the access transistor. The memory can also bedynamic random access memory (DRAM). Generally, a DRAM cell consists ofone transistor and a capacitor. A word line turns on/off the transistorat the time of reading/writing data stored in the capacitor, and the bitline is a data input/output path. DRAM data is destroyed during read,and refresh circuitry is used to continually refresh the data. Due tothe low component count per bit, a high density memory device isachieved.

[0062] In another embodiment, the circuit block 104 can be anintellectual property (“IP”) core which is reusable for licensing fromother companies or which is taken from the same/previous design. Incore-based design, individual cores may be developed and verifiedindependently as stand-alone modules, particularly when IP core islicensed from external design source. These functions are provided tothe user as IP blocks as special hardware blocks or pre-configuredprogrammable logic blocks. The IP blocks connect via a programmableswitching matrix to each other and other programmable logic. Thehardware logic block insertion to any position in a logic sequence isdone through the configurable logic matrix. These hardware logic blocksoffer a significant gate count reduction on high gate count frequentlyused logic functions, and the user does not require generic “logicelement” customization. In both cases, the user saves simulation time,minimize logic gate count, improve performance, reduce power consumptionand reduce product cost with pre-defined IP blocks. The switch matrix isreplaced by hardwires in the final ASIC.

[0063] The circuit blocks 104 can also be an array of programmableanalog blocks. In one embodiment, the analog blocks include programmablePLL, DLL, ADC and DAC. In another embodiment, each block contains anoperational amplifier, multiple programmable capacitors, and switchingarrangements for connecting the capacitors in such as a way as toperform the desired function. Switched capacitor filters can also beused to achieve an accurate filter specification through a ratio ofcapacitors and an accurate control of the frequency of a sampling clock.Multiple PLL's can be programmed to run at different frequencies on thesame chip to facilitate SoC applications requiring more than one clockfrequency.

[0064] The circuit blocks 104 also contain data fetch and data writecircuitry required to configure the configuration circuits 108. Thisoperation may be executed by a host CPU residing in the system, or thePLD device itself. During power up, these circuits initialize and readthe configuration data from an outside source, either in serial mode orin parallel mode. The data is stored in a predefined word length locallyand written to the configurability allocation. The programmedconfiguration data is verified against the locally stored data and aprogramming error flag is generated if there is a mismatch. Thesecircuits are redundant in the conversion of the PLD to an ASIC. However,these circuits are used in both FPGA and ASIC for test purposes, and hasno cost penalty. A pin-out option has a “disable” feature to disconnectthem for the customer use in the FPGA and ASIC.

[0065] Configuration circuits 108 provide active circuit control overdigital circuits 104. One embodiment of the configuration circuitincludes an array of memory elements. The user configuration of thismemory amounts to a specific bitmap of the programmable memory in asoftware representation.

[0066] Suitable memory elements include volatile or non volatile memoryelements. In non-volatile memory (NVM) based products, configurable datais held in one of metal link fuse, anti-fuse, EPROM, Flash, EEPROMmemory element, or ferro-electric elements. The first two are one timeprogrammable (OTP), while the last four can be programmed multipletimes. As EPROM's require UV light to erase data, only Flash & EEPROM'slend to in-system programmability (ISP). In volatile products, theconfigurable data storage can be SRAM cells or DRAM cells. With DRAMcells, the data requires constant refresh to prevent losses fromleakages. Additionally, one or more redundant memory cells controllingthe same circuit block can be used to enhance device yield.

[0067] The components of the memory element array can be a resistor,capacitor, transistor or a diode. In another embodiment of theconfiguration circuit, a memory element can be formed using thin filmdeposition. The memory element can be a thin film resistor, thin filmcapacitor, thin film transistor (TFT) or a thin film diode or a group ofthin film devices connected to form an SRAM cell.

[0068] This discussion is mostly on SRAM elements and can easily extendto include all other programmable elements. In all cases, the designneeds to adhere to rules that allow programmable module elimination,with no changes to the base die, a concept not used in PLD, FPGA, GateArray and ASIC products today.

[0069] An exemplary 6T SRAM cell, shown in FIG. 13, needs no highvoltage capability, nor added process complexity. The cell of FIG. 13has two back-to-back inverters 350-352 whose access is controlled bypass transistors 354-356. In addition, R-load & Thin Film Transistor(TFT) load PMOS based SRAM cells can be used for PLDs and FPGAs. Toachieve zero stand-by power by eliminating sensing circuitry, and reducememory element count for low input functions, these SRAM cells areembedded in truth table logic (also called Look-Up-Table) basedarchitectures.

[0070] Pass gate transistor 360 logic controlled by SRAM is shown inFIG. 14. In this embodiment, the memory cell (such as the cell of FIG.13) drives the pass transistor 360 to e-affect an outcome. A 5×6-switchpoint matrix 370 controlled by 30-SRAM cells coupled to 30-NMOS passgates is shown in FIG. 15. FIG. 16 shows the NMOS pass gate 360 logiccontrolled by the SRAM in FIG. 14 converted to hard-wire logic. Acontact 362, connected to Vcc (logic 1) or Vss (logic 0) depending onthe SRAM logic content, replace the SRAM cell. The SRAM logic mapping tohard wire connections are automatic and done by a software program thatis verifiable against the bit-map.

[0071] Similarly, FIG. 17 shows the 5×6-switch point matrix 370hard-wired by replacing the SRAM bits that control NMOS gates withhard-wires to Vcc or Vss. In FIG. 17, the bubble may represent eitherSRAM or hard-wire Vcc or Vss control on NMOS pass gates. In the case ofFuse or Antifuse arrays, contact or no contact between the two metallines in FIG. 15 directly replaces the programmable element and there isno NMOS pass-gate needed.

[0072] The P-Term logic builds the core of PLD's and complex PLD's(CPLD's) that use AND-OR blocks 202-204 (or equivalent NAND-NOR typelogic functions) as shown in the block diagram of FIG. 5 and oneexpansion is shown in FIG. 6 with and gates 210 and or gates 212. Gateimplementation of two inputs (11, 12) and two P-terms (P1, P2) NANDfunction can be single poly EEPROM bits as shown in FIG. 10. The dottedcircle contains the charge trapping floating gate, the programmingselect transistor, tunneling diode, a control gate capacitor andprogramming access nodes. The SRAM cell replaces that entire circle inthis invention as detailed next. The SRAM NAND-NOR array (also AND-ORarray) replacement has not been realized in prior art as SRAM cellsrequire Nwell & Pwell regions that consume large silicon area to preventlatch-up. The SRAM in TFT do not have well related constraints as NMOSand PMOS bodies are isolated from each other. Keeping the two pass gatesin silicon layers and moving SRAM to TFT layers allow P-Term logicimplementation with SRAM cells and subsequent replacement withhard-wires. In TFT SRAM conversion to final ASIC, the bubble on NMOSgate becomes a hard-wire connection to Vcc or Vss.

[0073] The length of input and output wires, and the drive on NMOS passgates and logic gate delays determine the overall PLD delay timing,independent of the SRAM cell parameters. By moving SRAM cell to TFTupper layers, the chip X,Y dimensions are reduced over 20% to 50%compared to traditional SRAM FPGA's, providing a faster logic evaluationtime. In addition, removal of SRAM cell later does not alter lateralwire length, wire loading and NMOS pass gate characteristic. Thevertical dimension change in eliminating the memory module is negligiblecompared to the lateral dimension of the ASIC, and has no impact ontiming. This allows maintaining identical timing between the FPGA andASIC implementations with and without the SRAM cells. The final ASICwith smaller die size and no SRAM elements have superior reliability,similar to an ASIC, leading to lower board level burn-in and fieldfailures compared to PLD's and FPGA's in use today.

[0074] Next, the wiring and/or routing circuit 112 is discussed. Thewiring and/or routing circuit connects each logic block to each otherlogic block. The wiring/routing circuit allows a high degree of routingflexibility per silicon area consumed and uniformly fast propagation ofsignals, including high-fanout signals, throughout the device. Thewiring module may contain one or many levels of metal interconnects.

[0075] One embodiment of a switch matrix is a 6×5 programmableswitch-matrix with 30 SRAM bits (or 30 Anti-fuses, or 30 fuses), shownin FIG. 15. The box in FIG. 14 contains the SRAM cell shown insidedotted box of FIG. 14, where the pass gate makes the connection betweenthe two wires, and the SRAM bit holds the configuration data. In thisconfiguration, the wire connection in circuit 112 occurs via a passtransistor located in circuit 104 controlled by an SRAM cell in circuit108. During power-up, a permanent non-volatile memory block located inthe system, loads the correct configuration data into SRAM cells. InFuse or Anti-fuse applications, the box simply represents theprogrammable element in circuit 108 between the two wires in circuit112. During the ASIC conversion this link is replaced with an open orshort between the wires.

[0076] Another embodiment provides short interconnect segments thatcould be joined to each other and to input and output terminals of thelogic blocks at programmable interconnection points. In anotherembodiment, direct connections to adjacent logic blocks can be used toincrease speed. For global signals that traverse long distances, longerlines are used. Segmented interconnect structures with routing lines ofvaried lengths can be used. In yet other embodiments, a hierarchicalinterconnect structure provides lines of short lengths connectable atboundaries to lines of longer lengths extending between the boundaries,and larger boundaries with lines of even longer length extending betweenthose boundaries. The routing circuit can connect adjacent logic blocksin two different hierarchical blocks differently than adjacent logicblocks in the same hierarchical block. Alternatively, a tile-basedinterconnect structure can be used where lines of varying lengths inwhich each tile in a rectangular array may be identical to each othertile. In yet another implementation, the interconnect lines can beseparated from the logic block inputs by way of a routing matrix, whichgives each interconnect line more flexible access to the logic blockinputs. In another embodiment, interconnect routing is driven byprogrammable buffers. Long wire lengths can be sub-divided into smallerlength segments with smaller buffers to achieve a net reduction in theoverall wire delay, and to obtain predictable timing in the logicrouting of the PLD.

[0077] Next, a brief description of the manufacturing process isdiscussed. During manufacturing, one or more digital circuits can beformed on a substrate. Next, the process selectively fabricates either amemory circuit or a conductive pattern substantially above the digitalcircuits to control portion of digital circuits. Finally, the processfabricates an interconnect and routing layer substantially above thedigital circuits and memory circuits to connect digital circuits and oneof the memory circuit or the conductive pattern.

[0078] The process can be modified to fabricate a generic fieldprogrammable gate array (FPGA) with the constructed memory circuit or anapplication specific integrated circuit (ASIC) with the constructedconductive pattern. Multiple ASICs can be fabricated with differentvariations of conductive patterns. The memory circuit and the conductivepattern have one or more substantially matching circuit characteristics.In this case, timing characteristics substantially unchanged by thecircuit control option. The process thus fabricates a programmable logicdevice by constructing digital circuits on a substrate; and constructinga non-planar circuit on the substrate after constructing the digitalcircuits, the non-planar circuit being either a memory deposited tostore data to configure the digital circuits to form a fieldprogrammable gate array (FPGA) or a conductive pattern deposited tohard-wire the digital circuits to form an application specificintegrated circuit (ASIC), wherein the deposited memory and theconductive pattern have substantially matching timing characteristics.In another embodiment, the hard-wire ASIC option may be incorporatedinto the digital circuit layer 100. In another embodiment, the hard-wireASIC option is incorporated into the routing layer 110.

[0079] Although an illustrative embodiment of the present invention, andvarious modifications thereof, have been described in detail herein withreference to the accompanying drawings, it is to be understood that theinvention is not limited to this precise embodiment and the describedmodifications, and that various changes and further modifications may beeffected therein by one skilled in the art without departing from thescope or spirit of the invention as defined in the appended claims.

What is claimed is:
 1. A three-dimensional semiconductor device,comprising: a first module layer having a plurality of circuit blocks;and a second module layer positioned substantially above the firstmodule layer, including a plurality of configuration circuits to controla portion of the circuit blocks.
 2. The device of claim 1, wherein theconfiguration circuits comprise memory elements.
 3. The device of claim2, wherein the memory element comprises one device selected from thefollowing: diode, transistor, thin film device, thin film resistor, thinfilm capacitor, thin film transistor (TFT).
 4. The device of claim 2,wherein the memory element is selected from the group consisting ofvolatile or non volatile memory elements.
 5. The device of claim 4,wherein the memory element is selected from a group of fuse links,antifuse capacitors, SRAM cells, DRAM cells, metal optional links, EPROMcells, EEPROM cells, flash cells, and ferro-electric elements.
 6. Thedevice of claim 1, wherein the memory elements further comprises one ormore redundant memory cells controlling the same circuit block.
 7. Thedevice of claim 1, wherein the configuration circuit comprises apredetermined conductive pattern to control the circuit blocks.
 8. Thedevice of claim 1, further comprising a third module layer formedsubstantially above the first and second module layer, whereininterconnect and routing signals are formed to connect the circuitblocks within the first and second module layers.
 9. The device of claim8, wherein the second module layer containing isolated throughconnections to connect the first module layer directly from the thirdmodule layer.
 10. The device of claim 1, further comprising a thirdmodule layer formed substantially below the first and second modulelayer, wherein interconnect and routing signals are formed to connectthe circuit blocks within the first and second module layers.
 11. Thedevice of claim 1, further comprising third and fourth module layerspositioned above and below the second module layer respectively, whereinthe third and fourth module layers provide interconnect and routingsignals to connect the circuit blocks within the first and second modulelayers.
 12. The device of claim 1, wherein the circuit block furthercomprises of programmable logic blocks which responds to input datasignals and develop corresponding complete or partial output logicsignals, and registers to store the logic signals and either outputtingthem to output terminals or returning them as inputs to additionalprogrammable logic blocks.
 13. The device of claim 12, comprising ofprogrammable register by-pass circuitry to facilitate combinationallogic.
 14. The device of claim 12, comprising of clock signals to allowsynchronous data flow.
 15. The device of claim 12, wherein theprogrammable logic block is selected from one of a pass gate logic, amultiplexer, a truth table logic, or an AND/OR logic.
 16. Amulti-dimensional semiconductor device, comprising: a first module layerhaving a plurality of circuit blocks formed on a first plane; and asecond module layer positioned on a second plane, including a pluralityof configuration circuits to control a portion of the circuit blocks.17. A system, comprising: a processor; data storage devices coupled tothe processor; and a three-dimensional semiconductor device coupled tothe processor, the 3D semiconductor device having a first module layerhaving a plurality of circuit blocks positioned on a first plane and asecond module layer formed on a second plane, including a plurality ofconfiguration circuits to control a portion of the circuit blocks. 18.The device in claim 17, wherein a portion of the processor is coupled toconfiguration memory built substantially above the portion of theprocessor.
 19. The device in claim 17, wherein a portion of the datastorage device is coupled to configuration memory built substantiallyabove the portion of the data storage device.
 20. A system, comprising:one or more third party intellectual property (IP) blocks in a firstmodule; data storage devices coupled to the IP blocks in the firstmodule; a plurality of configuration circuits in a second module coupledto the IP blocks; and a three-dimensional (3D) semiconductor devicecoupled to the IP blocks, the 3D semiconductor device having a firstmodule layer having a plurality of circuit blocks formed on a firstplane and a second module layer positioned on a second plane, includinga plurality of configuration circuits to control a portion of thecircuit blocks.
 21. A multi-dimensional semiconductor device,comprising: a plurality of circuit blocks formed on a substrate; and aplurality of configuration circuits formed substantially above thesubstrate to control at least one circuit block.
 22. The device of claim21, wherein the configuration circuit comprises a predeterminedconductive pattern to control the circuit blocks.
 23. The device ofclaim 21, wherein the configuration circuits comprise memory elements.24. The device of claim 22, wherein the memory element comprises onedevice selected from the following: diode, transistor, thin film device,thin film resistor, thin film capacitor, thin film transistor (TFT). 25.The device of claim 22, wherein the memory element is selected from thegroup consisting of volatile or non volatile memory elements.
 26. Thedevice of claim 25, wherein the memory element is selected from a groupof fuse links, antifuse capacitors, SRAM cells, DRAM cells, metaloptional links, EPROM cells, EEPROM cells, flash cells, andferro-electric elements.